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| TO-92 SS8550 TRANSISTOR (PNP) Plastic-Encapsulate Transistors TO-92 FEATURES Power dissipation PC : 1 W (TA=25) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 150 -55-150 Units V V V A 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Out capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(on) Cob fT Test conditions MIN -40 -25 -5 -0.1 -0.1 -0.1 85 40 -0.5 -1.2 -1 20 100 V V V pF MHz 400 TYP MAX UNIT V V V A A uA IC=-100uA, IE=0 IC=-0.1mA, IB=0 IE=-100A, IC=0 VCB=-40V, IE=0 VCE=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCB=-10V, IE=0mA,f=1MHZ VCE=-10V, IC=-50mA,f=-30MHZ CLASSIFICATION OF hFE(2) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 Typical Characteristics SS8550 |
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